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  • Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction

Nano Letters

Ross, Rivera, Schaibley, Lee-Wong, Yu, Taniguchi, Watanabe, Yan, Mandrus, Cobden, Yao, and Xu

2017 17 (2), pp 638–643

Abstract: Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin ...

  • Nanocavity Integrated van der Waals Heterostructure Light-Emitting Tunneling Diode
Liu, Clark, Fryett, Wu, Zheng, Hatami, Xu, and Majumdar

2017 17 (1), pp 200–205

Abstract: Developing a nanoscale, integrable, and electrically pumped single mode light source is an essential step toward on-chip optical information technologies and sensors. Here, we demonstrate nanocavity enhanced electroluminescence in van der Waals ...

  • MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Nourbakhsh, Zubair, Sajjad, Tavakkoli K. G., Chen, Fang, Ling, Kong, Dresselhaus, Kaxiras, Berggren, Antoniadis, and Palacios

2016 16 (12), pp 7798–7806

Abstract: Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its ...

  • Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition
Lee, Gul, Kim, Moon, Adhikari, Kim, Choi, Lee, and Lim

2017 17 (2), pp 673–678

Abstract: We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal–insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of ...

  • Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures
Latini, Winther, Olsen, and Thygesen

2017 17 (2), pp 938–945

Abstract: van der Waals heterostructures (vdWH) are ideal systems for exploring light–matter interactions at the atomic scale. In particular, structures with a type-II band alignment can yield detailed insight into carrier-photon conversion processes, which are ...

  • Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction
Bettis Homan, Sangwan, Balla, Bergeron, Weiss, and Hersam

2017 17 (1), pp 164–169

Abstract: van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed-dimensional p–n heterojunction diodes, such as p-type ...

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